The University of Western Australia

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Ipsum Lorem

Asghar Asgari

Adj/Prof Asghar Asgari

Adjunct Professor
Electrical, Electronic and Computer Engineering, School of

Contact details
Address
School of Electrical, Electronic and Computer Engineering
The University of Western Australia (M018)
35 Stirling Highway
CRAWLEY WA 6009
Australia
Email
asghar.asgari@uwa.edu.au
Personal homepage
http://riapa.tabrizu.ac.ir/en/
Biography
Asghar Asgari is borne in Iran at 1973. He got his BSc and MSc in Solid State Physics and Electronics from University of Tabriz, Iran. He got his PhD under Prof. M. Kalafi from University of Tabriz and Prof. L. Faraone from University of Western Australia, supervisions. In 2002 he joined Microelectronics Research Group in the University of Western Australia as research associate. In 2004, he started his work in Photonics group at the University of Tabriz in Iran. Currently he is Professor in Photonics Group at University of Tabriz and also Adjunct Professor in Microelectronics Research group at the University of Western Australia.
Key research
• Experimental and theoretical study of Crystal Growth.
• Theoretical study of transport and optical properties of bulk and low-dimensional Semiconductors (Nitride Material).
• Modelling of Semiconductor devices.
• Modelling of Nano-electronic and Optoelectronic devices.
Publications
Publications

S. Safa, A. Asgari, L. Faraone, A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices, J. Appl. Phys. 114, 053712 (2013).
L. Mohammadzadeh, S. Shojaei, E. Ahmadi, A. Asgari, Excitonic effects of bilayer graphene: A simple approach, Optik (2013).
A. Asgari, L. Faraone, Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN heterostructures, J. Appl. Phys. 114, 053702 (2013).
 Z. Arefiniaa, A. Asgari, Novel attributes in the scaling and performance considerations of the one-dimensional graphene-based photonic crystals for terahertz applications, Physica E. 54, 34-39 (2013).
E. Ahmadi, A. Asgari, Modeling of the Infrared Photodetector Based on Multi Layer Armchair Graphene Nanoribbons, J. Appl. Phys. 113, 093106 (2013).
H. Kaviani, A. Asgari, Investigation of self-focusing effects in wurtzite InGaN/GaN quantum dots, Optik, 124, 734–739 (2013).
A. A. Khorrami, A. Asgari, Modeling of GaN quantum dot terahertz cascade laser, OPTO-ELECTRONICS REVIEW, 21, 147 (2013)
E. Ahmadi, A. Asgari, Calculation of Third Order Susceptibility of Armchair graphene nanoribbon at near infrared wavelengths, optik (2013).
S. Saeid Nahei, S. Shojaei, A. Asgari, Excitonic Properties of a Spherical Semiconductor Quantum Dot: the role of phonons, optik 124, 2561 (2013).
E. Ahmadi, A. Asgari, Carrier Generation and Recombination Rate in Armchair Graphene Nanoribbons, Eur. Phys. J. B 86, 19 (2013).
E. Ahmadi, A. Asgari, The Dark Current of the Infrared Photodetectors Based on Armchair Graphene Nanoribbons, Physica Scripta (accepted 2013).
A. Asgari, L. Faraone, SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors, Appl. Phys. Lett. 100, 122106 (2012).
S. Dashti, A. Asgari, Optimization of Optical Gain in Al Ga N/GaN/Al GaN Strained Quantum Well Laser, Optik 123, 1546 (2012).
E. Ahmadi, A. Asgari, E. Ahmadiniar, The Optical Responsivity in IR- Photodetector Based on Armchair Graphene Nanoribbons with p-i-n structure, Superlattices and Microstructures, 52, 605 (2012)
A. Asgari, N. Fazli, Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors, Physica E, 46, 174 (2012)
H. Mohammadpour, A. Asgari, Graphene Nanoribbon tunneling field effect transistors, Physica E, 46, 270 (2012).
A. Asgari, S. Babanejad, A. Asgari, Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN Heterostructures, J. Appl. Physics. 110, 113713 (2011).
A. A. Khorrami, A. Asgari, ,Temperature dependence of the threshold current density of a GaN based quantum dot laser, Phys. Status Solidi C 8, No. 9, 2915 (2011).
A. Asgari, S. Taheri, Modeling of Temperature Sensor Built on GaN Nanostructures, Physica E, 43, 1091 (2011).
Mohammadzadeh, A. Asgari, S. Shojaei, E. Ahmadi, Theoretical Calculation of Excitonic Binding Energies and Optical Absorption Spectra for Armchair Graphene Nanoribbons, Eur. Phys. J. B. 84, 249-253 (2011).
H. Mohammadpour, A. Asgari, Numerical Study of Quantum Transport in the double-gate graphene nanoribbon field effect transistors, Physica E, 43, 1708 (2011).
S. Razi, A. Asgari, F. Ghasemi, Modelling of high temperature GaN quantum dot infrared photodetectors, International Journal of Opticas and Photonics 4, 77 (2011).
A. Asgari, Kh. Khalili, Temperature Dependence of InGaN/GaN Multiple Quantum Well Based High Efficiency Solar Cell, Solar Energy Materials and Solar Cells, 95, 3124 (2011).
H. Mohammadpour, A. Asgari, Crossed Andreev reffection in graphene Normal-Superconductor-Normal structure with pseudo-diffusive interfaces, Physics letters A, 375,1339 (2011).
A. Asgari, S. Safa, M. Mouchliadis, The lifetime of indirect excitons in coupled AlGaN/GaN quantum wells in an electrostatic trap, Superlattices and Microstructures, 49, 487 (2011).
A. Asgari, S. Razi, High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature, Optics Express, 18, 14604 (2010).
S. Sheshechi, A. Asgari, R. Kheradmand, The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes, Optical and Quantum Electronics, 41, 7, 525 (2009).
S. Shojaei, A. Asgari, M. Kalafi, Nonlinear optical properties of biexciton states in GaN quantum disks, Eur. Phys. J. B 72, 211–216 (2009).
A. Asgari, E. Ahmadi, M. Kalafi, AlxGa1-xN/GaN Multi-Quantum Well ultraviolet detector based on p-i-n heterostructures, Microelectronics Journal, 40, 104, (2009).
Z. Hashempour, A.Asgari, S.Nikipar, M.Abolhasani, M.Kalafi, Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including traps and temperature effects, Physica E 41, 1517–1521, (2009).
H. Rasooli Saghai, A. Asgari, H. Baghban Asghari Nejad and A. Rostami, A study in Optical Properties of AlGaN/GaN Pyramid and Prism-shape Quantum Dots, Physica E 41, 245–253, (2008).
S. Shojaei, A. Asgari, M. Kalafi, G. Goldoni, Coulomb-induced nonlinearities in GaN microdisks, Eur. Phys. J. B 65, 505–509 (2008).
A. Asgari, Bavili, Capacitance–voltage characteristics of InN quantum dots in AlGaN/GaN Heterostructure, Book Chapter, Chapter 1, (2008).
M. Karimi, M. Kalafi, A. Asgari, Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6 μm spectral region operating at room temperature, Microelectronics Journal, 38, 216 (2007).
A. Asgari, The Control of Two-Dimensional-Electron-Gas density and Mobility in AlGaN/GaN Heterostructures with Schottky gate, Materials Science and Engineering C 26, 898, (2006).
A. Asgari, M. Kalafi, Schottky gate effects on transport properties of AlGaN/GaN Heterostructures, Phys. Stat. Sol (c) 3, 2333 (2006).
B. Rezaei, A. Asgari, M. Kalafi, Electronic band structure pseudo-potential calculation of Wurtzite III-Nitride materials, Physica B, 371, 107 (2006).
A. Asgari, M. Karamad, M. Kalafi, Modeling of trap-assisted tunneling in AlGaN/GaN heterostructure field effect transistors with different Al mole fraction, Superlattices and Microstructures, 40, 603 (2006).
R. Yahyazadeh, A. Asgari, M. Kalafi, The effects of depletion layer on negative differential conductivity in AlGaN/GaN high electron mobility transistor, Physica E, 33, 77 (2006).
A. Asgari, M. Kalafi, L. Faraone, A quasi-two-dimensional Charge transport in AlGaN/GaN High electron mobility transistor, Physica E, 28, 491, (2005).
A. Asgari, M. Kalafi, L. Faraone, Theoretical model of transport characteristics of AlGaN/GaN High electron mobility transistor, Phys.Stat.. Sol. (c) 2, 1047 (2005).
A. Asgari, M. Kalafi, L. Faraone, The Effects of GaN Capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures, Physica E, 25, 431 (2005).
A. Asgari, M. Kalafi, L. Faraone, Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1-xN/GaN heterostructures, Applied Physics, 95, 1185 (2004).
M. Kalafi, A. Asgari, The behavior of two-dimensional electron gas in GaN/AlxGa1-xN/GaN heterostructures with very thin AlxGa1-xN barriers, Physica E, 19, 321 (2003).
M. Kalafi, A. Asgari, Intersubband and Intrasubband overlap integrals in AlxGa1-xN/GaN single-well heterostructures, Physics letters A, 309, 306, (2003)
Future research
Nano-electronic and Optoelectronics Devices
Languages
Persian, Turkish, English
Memberships
Australian Nanotechnology network;
Iranian Nanotechnology Society;
Iranian Physics Society;
SPIE,
American Physics Society
Honours and awards
Research Fellow,Microelectronic Research group, The University of Western Australia,Australia 2003-2004;
Adjunct Senior Research FellowMicroelectronic Research group, The University of Western Australia, Australia 2004- 2015;
Distinguished Researcher (award),University of Tabriz, Iran 2007;
Distinguished Researcher (award), University of Tabriz,Iran 2009;
Distinguished Researcher (award),University of Tabriz,Iran 2011;
Distinguished Researcher (award),University of Tabriz,Iran 2013;
Previous positions
Research Associate
Teaching
Quantum Mechanic; Semiconductor Physics; Nano-Physics, Photo-Detectors, Semiconductor Optoelectronic Devices, Low-Dimentional semiconductors
Current external positions
Professor at Research Institute for Applied Physics, University of Tabriz, Iran
Current projects
• A fundamental study of electronic transport in advanced semiconductor nanostructures
Research profile
Research profile and publications
 

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Last updated:
Tuesday, 3 November, 2015 2:39 PM