The University of Western Australia

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Professor Wen Lei

Future Fellow
Microelectronics Research Group (School of Electrical, Electronic and Computer Engineering)

Contact details
Address
Microelectronics Research Group
The University of Western Australia (M018)
35 Stirling Highway
CRAWLEY WA 6009
Australia
Phone
+61 8 6488 1848
Email
wen.lei@uwa.edu.au
Personal homepage
www.rglei.altervista.org (If clicking on the link does not work, try copying the link directly into your browser address bar)

Future Fellow
Electrical, Electronic and Computer Engineering, School of

Contact details
Address
School of Electrical, Electronic and Computer Engineering
The University of Western Australia (M018)
35 Stirling Highway
CRAWLEY WA 6009
Australia
Phone
+61 8 6488 1848
Email
wen.lei@uwa.edu.au
Personal homepage
www.rglei.altervista.org (If clicking on the link does not work, try copying the link directly into your browser address bar)
Qualifications
PhD Chinese Acad.Sc.
Biography
Dr. Wen Lei is a Professor and an ARC Future Fellow at University of Western Australia and leads the Electronic Materials and Devices Research Lab (EMDRL) at School of Electrical, Electronic and Computer Engineering, University of Western Australia. Since his PhD study (2003), he has been working on the epitaxial growth (MBE, MOCVD and CVD) and characterization of semiconductor thin film materials, and their applications in devices such as detectors, lasers, and solar cells. In the last several years, He holds 2 patents and has published over 70 high profile papers in top journals like Applied Physics Reviews, Physical Review Letters, Small, Analytical Chemistry, Nanoscale, Applied Physics Letters, etc. He was awarded his prestigious ARC Future Fellowship in 2013 and ARC Australian Postdoctoral Fellowship in 2006. He is also a lead guest editor/editorial board member of five international journals and a regular reviewer for various international prestigious journals and funding agencies.
Key research
Key research areas of interest include:
• Molecular Beam Epitaxy
• Thin film infrared materials and detector devices;
• Novel low-dimensional semiconductor optoelectronic materials and devices, including quantum dots, nanowires, and 2-Dimensional materials;
• Chemi/bio sensors for environmental monitoring applications
• Energy conversion and storage materials and devices, including solar cells, thermoelectric devices, and battery.
For details about his research, please visit: www.rglei.altervista.org
Publications
Selected publications (i.e. 2006 onwards)

Invited book chapters
1. W. Lei and A. Lorke, “Growth and spectroscopy of semiconductor quantum rings”, in Physics of quantum rings, Ed. Vladimir Fomin, Springer -Verlag Berlin Heidelberg (2014).
2. W. Lei, Y.H. Chen and Z.G. Wang, “Ordering of self-assembled quantum wires on InP (001) surfaces”, In One-Dimensional Nanostructures, Ed. Zhiming M. Wang, Springer London, Limited (2008).

Invited topical review papers
3. Wen Lei and Chennupati Jagadish, “Lasers and photodetectors for Mid-infrared 2-3 um applications”, Appl. Phys. Review in J. Appl. Phys., 104, 091101(2008).
4. Wen Lei, Jarek Antoszewski, and Lorenzo Faraone, “Progress, challenges and opportunities for HgCdTe infrared materials and detectors”, Applied Physics Reviews, 2, 041303 (2015).


Refereed journal papers (2006 onwards)
5. C.L. Yuan, Y.X. Mei, A.J. Hong, T. Yu, Y. Yang, F.Y. Zeng, K. Xu, Q.L. Li, X.F. Luo, J. He, and W. Lei, “Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots”, J. Phys. Chem. C, 121, 5800 (2017).
6. C.L. Yuan, W.Y. Wei, Y.X. Mei, X.F. Luo, W. Lei, “A new approach for fabricating Au-Ag alloy nanoparticles confined in Al2O3 matrix”, Materials Letters, 190, 248 (2017).
7. R. Gu, J. Antoszewski, W. Lei, I. Madni, G. Umana-Membrenao, L. Faraone, “MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors”, Journal of Crystal Growth, 468, 216 (2017).
8. C.L. Yuan, Y.X. Mei, T. Yu, Y. Yang, Q.L. Li, A.J. Hong, K. Xu, X.F. Luo, J. He and W. Lei, “Tuning strain and photoluminescence of confined Au nanoparticles by hydrogen passivation”, RSC Advances, 7, 6875 (2017).
9. W. Lei, I. Madni, Y.L. Ren, C.L. Yuan, G.Q. Luo, and L. Faraone, “Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures”, Appl. Phys. Lett., 109, 083106 (2016).
10. R. Gu, W. Lei, J. Antoszewski, L. Faraone, “Investigation of substrate effects on interface strain and defect generation in MBE-grown HgCdTe”, Journal of Electronic Materials, 45, 4596 (2016). (The mainstream journal for HgCdTe research)
11. K. Xu, Y. Huang, B. Chen, Y. Xia, W. Lei, Z. Wang, Q. Wang, F. Wang, L. Yin and J. He, “Towards High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering”, Small, 12, 3106 (2016).
12. C.L. Yuan, Y.J. Cao, X.F. Luo, T. Yu, Z.P. Huang, B. Xu, Y. Yang, Q.L. Li, and W. Lei, “Monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayer MoS2 flakes with enhanced photoluminescence”, Nanoscale, 7, 17468 (2015).
13. I. Madni, G. Umana-Membrino, W. Lei, R. Gu, J. Antoszewski, L. Faraone, “Minority Carrier Lifetime in Iodine-Doped HgCdTe Epitaxial Layers”, Appl. Phys. Lett., 107, 182107 (2015).
14. W. Lei, R.J. Gu, J. Antoszewski, J. Dell, G. Neusser, M. Sieger, B. Mizaikoff, and L. Faraone, “MBE growth of mid-wave infrared HgCdTe layers on GaSb alternative substrates”, Journal of Electronic Materials, 44, 3180 (2015).
15. J. Zhang, G. A. Umana-Membreno, R. Gu, W. Lei, J. Antoszewski, J. M. Dell, and L. Faraone, “Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation”, Journal of Electronic Materials, 44, 2990 (2015).
16. C.L. Yuan, Y. Zhang, J. He, S.L. Ye, W. Lei, X.H. Liu and G. Gu, “Strain-gradient facilitated formation of confined Ge/GeO2 nanoparticles with a cracked shell and enhanced two-photon absorption”,Journal of Materials Chemistry C, 2, 8768 (2014).
17. Z. B. Chen, W. Lei, B. Chen, Y. B. Wang, X. Z. Liao, H. H. Tan, J. Zou, S. P. Ringer, and C. Jagadish, “Elemental Diffusion during the Droplet Epitaxy Growth of In(Ga)As/GaAs(001) Quantum Dots by Metal-Organic Chemical Vapor Deposition”, Appl. Phys. Lett., 104, 022108 (2014).
18. P. Kluth, J. Sullivan, W. Li, C. S. Schnohr, R. Giulian, L. L. Araujo, W. Lei, M. D. Rodriguez, B. Afra, R. C. Ewing, and M. C. Ridgway, “Swift heavy ion irradiation induced nano-porosity in GaSb”, Appl. Phys. Lett., 104, 023105 (2014).
19. W. Lei, R.J. Gu, J. Antoszewski, J. Dell, and L. Faraone, “GaSb: a new alternative substrate for epitaxial growth of HgCdTe”, J. Electronic Materials, 43, 2788 (2014).
20. J. Bai, W.D. Hu, N. Guo, W. Lei, Y. Lv, X. Zhang, J. Si, X.S. Chen, and W. Lu, “Performance Optimization of InSb Infrared Focal-Plane Arrays with Diffractive Microlenses”, Journal of Electronic Materials, 43, 2795 (2014).
21. Y. Li, Z.H. Ye, W.D. Hu, W. Lei, Y. L. Gao, K. He, H. Hua, P. Zhang, Y.Y. Chen, C. Lin, X.N. Hu, R.J. Ding, L. He “Numerical Simulation of Microlensed HgCdTe Infrared Focal Plane Array Operating in Real Optical System”, Journal of Electronic Materials, 43, 2879 (2014).
22. Z.Y. Wang, Y. Huang, W. Lei, X.S. Chen, H. Zhao, X. Zhou, and W. Lu, “Structural and energetic analysis of Group-V impurities in p-type HgCdTe: The case of As and Sb”, Journal of Electronic Materials, 43, 2849 (2014).
23. X.F. Wang, J. Antoszewski, G. Putrino, W. Lei, L. Faraone, and B. Mizaikoff, “Mercury−Cadmium−Telluride Waveguides − A Novel Strategy for On-Chip Mid-Infrared Sensors”, Anal. Chem., 85, 10648 (2013). Reported by Journal of Technology and Science and Verticalnews (Jan 5 2014).
24. T.F. Li, L.Z. Gao, W. Lei, L.J. Guo, H.Y. Pan, T. Yang, Y.H. Chen and Z.G. Wang, “InAs mediated growth of vertical InSb nanowires on Si substrates”, Nanoscale Research Letters, 8, 333 (2013).
25. W. Lei, H.H. Tan, and C. Jagadish, “Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique”, Appl. Phys. Lett., 102, 033111 (2013).
26. T.F. Li, L.Z. Gao, W. Lei, L.J. Guo, T. Yang, Y.H. Chen and Z.G. Wang, “Raman study on zinc blende single InAs nanowire grown on Si(111) substrate”, Nanoscale Research Letters, 8, 27 (2013).
27. Z.B. Chen, W. Lei, B. Chen, Y.B. Wang, X.Z. Liao, H.H. Tan, J. Zou, S.P. Ringer, C. Jagadish, “Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy”, Scripta Materialia, 69, 638 (2013).
28. N. Guo, W.D. Hu, X.S. Chen, W. Lei, Y.Q. Lv, X.L. Zhang, J.J. Si, and W. Lu, "Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures", Journal of Electronic Materials, 42, 3181 (2013).
29. Z.Y. Wang, Y. Huang, X.S. Chen, H.X. Zhao, W. Lei, and W. Lu, “Interaction between AsHg and VHg in arsenic doped Hg1-xCdxTe”, J. Electronic Materials, 42, 3054 (2013).
30. Z. H. Ye, W. D. Hu, W. Lei, L. Yang, P. Zhang, Y. Huang, C. Lin, C. H. Sun, X. N. Hu, R. J. Ding, X. S. Chen, W. Lu, and L. He, “Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches”, J. Electronic Materials, 42, 3164 (2013).
31. C. L. Yuan, S. L. Ye, B. Xu, and W. Lei, “Strain induced tetragonal SrTiO3 nanoparticles at room temperature”, Appl. Phys. Lett., 101, 071909 (2012).
32. Z.B. Chen, W. Lei, B. Chen, Y.B. Wang, X.Z. Liao, H.H Tan, J. Zou, S.P. Ringer and C. Jagadish, “Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?”, Nanoscale Research Letters, 7, 486 (2012).
33. C.L. Yuan, B. Xu, and W. Lei, “Strain-induced direct band gap LaAlO3 nanocrystals”, Materials Letters, 68, 392 (2012).
34. W. Lei, H.H. Tan, and C. Jagadish, “Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure”, Appl. Phys. Lett., 99, 193110 (2011).
35. T.F. Li, Y.H. Chen, W. Lei, X.L. Zhou, S. Luo, Y.Z. Hu, L.J. Wang, T. Yang and Z.G. Wang, “Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates”, Nanoscale Research Letters, 6, 463 (2011).
36. W. Lei, “Fabrication and optical properties of self-assembled InAsSb/InP nanostructures on InP (001) substrate”, Journal of Nanoparticle Research, 13, 1647 (2011).
37. T.F. Li, Y.H. Chen, W. Lei, X.L. Zhou,and Z.G. Wang, “Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer”, Physica E, 43, 869 (2011).
38. W. Lei, H. H. Tan, C. Jagadish, Q.J. Ren, J. Lu, and Z.H. Chen, “Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: effect of deposition thickness and composition”, Appl. Phys. Lett., 97, 223108 (2010).
39. W. Lei, C. Notthoff, J. Peng, D. Reuter, A. Wieck, G. Bester, and A. Lorke, “``Artificial atoms'' in magnetic fields: Wave-function shaping and phase-sensitive tunneling”, Phys. Rev. Lett., 105, 176804 (2010). featured in Nature Materials, 10, 173 (2011).
40. W. Lei, H.H. Tan and C. Jagadish, “Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers”, Journal of Physics D: Applied Physics, 43, 302001 (2010).
41. W. Lei, H.H. Tan, and C. Jagadish, “Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer”, Appl. Phys. Lett., 96, 213102 (2010).
42. C. L. Yuan, J. G. Chu, and W. Lei, “Tuning defect-related photoluminescence of Ge nanocrystals by stress”, Applied Physics A: Materials Science & Processing, 99, 673 (2010).
43. C.L Yuan, and W. Lei, “Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects”, Applied Surface Science, 256, 3138 (2010).
44. C.L Yuan, and W. Lei, “Photoluminescence of Al2O3 nanocrystals induced by compressive stress”, Physica E, 42, 1687 (2010).
45. W. Lei, C. Notthoff, A. Lorke, D. Reuter and A.D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy”, Appl. Phys. Lett., 96, 033111 (2010).
46. W. Lei, H. H. Tan and C. Jagadish, “Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures”, Appl. Phys. Lett., 95, 143124 (2009).
47. W. Lei, H. H. Tan, and C. Jagadish, “Formation and shape control of InAsSb/InP (001) nanostructures”, Appl. Phys. Lett.. 95, 013108 (2009).
48. W. Lei, Y.L. Ren, Y.L. Wang, and Q. Li, “Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation”, J. Cryst. Growth, 311, 4632 (2009).
49. W. Lei, C. Notthoff, M. Offer, C. Meier, A. Lorke, C. Jagadish, and A. D. Wieck, “Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and 1-dimensional numerical simulation”, Journal of Materials Research, 24, 2179 (2009).
50. W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, and A. D. Wieck, “Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy”, Appl. Phys. Lett., 92, 193111 (2008).
51. W. Lei, O. Wibbelhoff, C. Notthoff, B. Marquardt, D. Reuter, A.D. Wieck, A. Lorke, “Magnetic-field-induced modification of the wave-functions in InAs quantum dots”, Physica E, 40, 1870 (2008).
52. L.K. Yu, B. Xu, Z.G. Wang, P. Jin, C. Zhao, W. Lei, J. Sun, L.J. Hu, “Temperature dependence of surface quantum dots grown under frequent growth interruption”, Physica E, 40, 503(2008).
53. W. Lei, Y.L. Wang, Y.H. Chen, P. Jin, X.L. Ye, B. Xu and Z.G. Wang, “Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix”, Appl. Phys. Lett., 90, 103118(2007).
54. W. Lei, Y.H. Chen, P. Jin, B. Xu, X.L.Ye, Z.G. Wang and X.Q. Huang, “Lateral intersubband photocurrent study on InAs/InAlAs/InP self-assembled nanostructures”, International Journal of Nanoscience, 5, 729 (2007).
55. Y.L. Wang, H. Cui, W. Lei, Y. Su, Y.H. Chen, J. Wu, and Z.G. Wang, “Influence of InAs deposition thickness on the structural and optical properties of InAs quantum wires”, Journal of University of Science and Technology Beijing (current title: International Journal of Minerals, Metallurgy, and Materials), 14, 341 (2007).
56. W. Lei, Y.H. Chen, P. Jin, X.L. Ye, Y.L. Wang, B. Xu and Z.G. Wang, “Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices”, Appl. Phys. Lett., 88, 063114(2006).
57. W. Lei, Y.H. Chen, Y.L. Wang, X.Q. Huang, Ch. Zhao, B. Xu, P. Jin, Y.P. Zeng and Z.G. Wang, “Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness”, J. Cryst. Growth, 286, 23(2006).
58. C. Zhao, Y.H. Chen, Man Zhao, C.L. Zhang, B. Xu, L.K. Yu, J. Sun, W. Lei and Z.G. Wang, “Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth”, Materials Science in Semiconductor Processing, 9, 31 (2006).
59. W. Lei, Y.H. Chen, B. Xu, P. Jin, Y.L. Wang, Ch. Zhao and Z.G. Wang, “Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots”, Solid State Communications, 137, 606 (2006).
60. C. Zhao, Y.H. Chen, C.X. Cui, B. Xu, L.K. Yu, W. Lei, J. Sun and Z.G. Wang, “Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate”, Solid State Communications, 137, 630 (2006).
61. L.K. Yu, B. Xu, Z.G. Wang, P. Jin, C. Zhao, W. Lei, L.J. Hu, N. Liu, “Formation Process of S-K Quantum Dots”, Chinese Journal of Semiconductors, 27, 80 (2006). (In Chinese)
62. Y. L. Wang, Y. H. Chen, J. Wu, W. Lei, Z. G. Wang and Y. P. Zeng, “Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)”, J. Cryst. Growth, 284, 306(2006).
Funding received
Funding received (selected)
• Bandgap engineered HgCdTe heterostructures on GaSb alternative substrates, ARC Discovery Project, CI
• National facility for characterisation of infrared imaging technologies, ARC LIEF Project, CI
• HgCdSe: A novel II-VI semiconductor material for next generation infrared technologies, ARC Future Fellowships, Lead CI.
• InAsSb quantum dots for mid-infrared lasers, ARC Discovery Project, Lead CI.
• Exploring new semiconductor materials for the next generation of infrared sensors, UWA ECM small Research Development Grant, Lead CI.
• Physical property study of novel HgCdSe infrared materials, UWA RCA Award, Lead CI
• Electrical characterization of novel “nBn” HgCdTe and HgCdSe infrared detectors, and HgTe/CdTe quantum well topological insulators for future electronic engineering applications, UWA Gledden Visiting Fellowship, CI.
• On-chip Mid-infrared chem/bio Sensors for analysing Hydrocarbons in Aqueous Environments, Universities Australia - DAAd German Research Cooperation Program, Lead CI.
• UWA Start-up grant, UWA, Lead CI.
Teaching
• ENSC 3017 "Circuits and Electronics", Unit Coordinator and Lecturer
• ENSC 3014 "Electronic Materials and Devices", Unit Coordinator and Lecturer
• ELEC 4301 "Digital Communications and Networking", Lecturer
• ELEC 3306 "Signals and Systems 3", Lecturer.
Current external positions
Current external positions (selected)

• Lead guest editor for a special issue of Journal of Nanoscience and Technology
• Guest editor for a special issue of Advances in Condensed Matter Physics
• Member of editorial board of two scientific journals: Journal of Crystallization Process and Technology, Crystal Structure Theory and Applications, and ICTACT Journal on Micro-Electronic.
• Reviewer for a number of scientific journals such as Nanoscale, Scientific Reports, Nanotechnology, Nanoscale Research Letters, Journal of Applied Physics, Semiconductor Science and Technology, IEEE Journal of Selected Topics in Quantum Electronics, Journal of Nanoparticle Research, The Journal of Physical Chemistry, Journal of Physics D: Applied Physics, Journal of Luminescence, Sensors and Actuators: A. Physical, Vacuum, Current Nanoscience, Physica E, and Superlattices and Microstructures, Journal of Crystallization Process and Technology.
Current projects
• MBE growth and fabrication of HgCdTe infrared sensors;
• Development of novel HgCdSe infrared materials and sensor devices;
• Advanced infrared sensors with novel device architectures;
• On-chip integration of mid-infrared chemical sensors for environmental monitoring applications;
• Novel low-dimensional semiconductor optoelectronic materials and devices, including quantum dots, nanowires, and 2-dimensional materials;
• Energy conversion and storage materials and devices, including solar cells and battery.
Research profile
Research profile and publications
 

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